GP1M008A025PG Tech -Spezifikationen
Global Power Technologies Group - GP1M008A025PG Technische Spezifikationen, Attribute, Parameter und Teile mit ähnlichen Spezifikationen wie Global Power Technologies Group - GP1M008A025PG
| Produkteigenschaften | Eigenschaften | |
|---|---|---|
| Hersteller | SemiQ | |
| VGS (th) (Max) @ Id | 5V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device-Gehäuse | I-PAK | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 4A, 10V | |
| Verlustleistung (max) | 52W (Tc) | |
| Verpackung | Tube | |
| Verpackung / Gehäuse | TO-251-3 Short Leads, IPak, TO-251AA | |
| Andere Namen | 1560-1166-1 1560-1166-1-ND 1560-1166-5 |
|
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Produkteigenschaften | Eigenschaften | |
|---|---|---|
| Befestigungsart | Through Hole | |
| Feuchtigkeitsempfindlichkeitsniveau (MSL) | 1 (Unlimited) | |
| Bleifreier Status / RoHS-Status | Lead free / RoHS Compliant | |
| Eingabekapazität (Ciss) (Max) @ Vds | 423pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 8.4nC @ 10V | |
| Typ FET | N-Channel | |
| FET-Merkmal | - | |
| Antriebsspannung (Max Rds On, Min Rds On) | 10V | |
| Drain-Source-Spannung (Vdss) | 250V | |
| detaillierte Beschreibung | N-Channel 250V 8A (Tc) 52W (Tc) Through Hole I-PAK | |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 8A (Tc) |
Die rechten drei Teile haben ähnliche Spezifikation wie Global Power Technologies Group GP1M008A025PG.
| Produkteigenschaften |  |
|
|
 |
|---|---|---|---|---|
| Artikelnummer | GP1M008A025PG | GP1M018A020PG | GP1M003A090PH | GP1S092HCPI |
| Hersteller | Global Power Technologies Group | Global Power Technologies Group | Global Power Technologies Group | Sharp Microelectronics |
| FET-Merkmal | - | - | - | - |
| VGS (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 4V @ 250µA | - |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 8A (Tc) | 18A (Tc) | 2.5A (Tc) | - |
| Feuchtigkeitsempfindlichkeitsniveau (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | - |
| Drain-Source-Spannung (Vdss) | 250V | 200V | 900V | - |
| Supplier Device-Gehäuse | I-PAK | I-PAK | I-PAK | - |
| Verpackung / Gehäuse | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | 4-SMD |
| Bleifreier Status / RoHS-Status | Lead free / RoHS Compliant | Lead free / RoHS Compliant | Lead free / RoHS Compliant | - |
| Typ FET | N-Channel | N-Channel | N-Channel | - |
| Vgs (Max) | ±30V | ±30V | ±30V | - |
| detaillierte Beschreibung | N-Channel 250V 8A (Tc) 52W (Tc) Through Hole I-PAK | N-Channel 200V 18A (Tc) 94W (Tc) Through Hole I-PAK | N-Channel 900V 2.5A (Tc) 94W (Tc) Through Hole I-PAK | - |
| Antriebsspannung (Max Rds On, Min Rds On) | 10V | 10V | 10V | - |
| Betriebstemperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -25°C ~ 85°C |
| Serie | - | - | - | - |
| Verlustleistung (max) | 52W (Tc) | 94W (Tc) | 94W (Tc) | - |
| Gate Charge (Qg) (Max) @ Vgs | 8.4nC @ 10V | 18nC @ 10V | 17nC @ 10V | - |
| Andere Namen | 1560-1166-1 1560-1166-1-ND 1560-1166-5 |
1560-1190-1 1560-1190-1-ND 1560-1190-5 |
1560-1158-1 1560-1158-1-ND 1560-1158-5 |
- |
| Verpackung | Tube | Tube | Tube | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Befestigungsart | Through Hole | Through Hole | Through Hole | Surface Mount |
| Eingabekapazität (Ciss) (Max) @ Vds | 423pF @ 25V | 950pF @ 25V | 748pF @ 25V | - |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 4A, 10V | 170 mOhm @ 9A, 10V | 5.1 Ohm @ 1.25A, 10V | - |
Laden Sie GP1M008A025PG PDF -Datenblätter und Global Power Technologies Group -Dokumentation für GP1M008A025PG - Global Power Technologies Group herunter.
GP1S092HCPISharp MicroelectronicsSENSOR OPT SLOT PHOTOTRANS 4SMD
GP1FSV51TKVFSharp MicroelectronicsOPTOELECTRONIC COMPONENTGP1FMV31TKSFSharp MicroelectronicsGP1FSV51TMF6Sharp MicroelectronicsGP1L52Sharp Microelectronics
GP1S093HCZ0FSHARP/Socle TechnologySENSOR OPT SLOT PHOTOTRAN PCB MTGP1FSV31TK0FSharp MicroelectronicsOPTOELECTRONIC COMPONENTGP1S092HCPI6Sharp MicroelectronicsGP1S05Sharp Microelectronics
GP1FMV51TK0FSharp MicroelectronicsTRANSMITTER FIBER OPTIC 13.2MBPSGP1M018A020PGGlobal Power Technologies GroupMOSFET N-CH 200V 18A IPAK
GP1S036HEZSharp MicroelectronicsSENSOR TILT 2PHASE 20MA THGP1S092HCPKFSharp MicroelectronicsGP1L51Sharp MicroelectronicsGP1M003A090PHGlobal Power Technologies GroupMOSFET N-CH 900V 2.5A IPAKGP1L53VJ000FSharp MicroelectronicsGP1FMV31TKOFSharp MicroelectronicsGP1S092HCPIFSHARP/Socle TechnologySENSOR OPT SLOT PHOTOTRANS 4SMD| Logistische Zeitreferenz für Gemeinsame Länder | ||
|---|---|---|
| Region | Land | Logistische Zeit (Tag) |
| Amerika | Vereinigte Staaten | 5 |
| Brasilien | 7 | |
| Europa | Deutschland | 5 |
| Großbritannien | 4 | |
| Italien | 5 | |
| Ozeanien | Australien | 6 |
| Neuseeland | 5 | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Naher Osten | Israel | 6 |
| DHL & FedEx -Versandkosten Referenz | |
|---|---|
| Versandkosten (KG) | Referenz DHL (USD $) |
| 0.00kg-1.00kg | USD$30.00 - USD$60.00 |
| 1.00kg-2.00kg | USD$40.00 - USD$80.00 |
| 2.00kg-3.00kg | USD$50.00 - USD$100.00 |
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