Vergleichen | Bild | Teil # | Hersteller | Beschreibung | Lagerung | ECAD -Modell | RoHS | Verpackung | FET-Merkmal | Drain-Source-Spannung (Vdss) | Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | Rds On (Max) @ Id, Vgs | VGS (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Eingabekapazität (Ciss) (Max) @ Vds | Antriebsspannung (Max Rds On, Min Rds On) | Vgs (Max) | Typ FET | Bleifreier Status / RoHS-Status | Feuchtigkeitsempfindlichkeitsniveau (MSL) | Andere Namen | Grundproduktnummer | Paket | Serie | detaillierte Beschreibung | Technologie | Betriebstemperatur | Befestigungsart | Verpackung / Gehäuse | Supplier Device-Gehäuse | Verlustleistung (max) | Anzahl |
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ZVN3306ASTZ | Diodes Incorporated | MOSFET N-CH 60V 270MA E-LINE | vorrätig112690 pcs | - | - | 60 V | 270mA (Ta) | 5Ohm @ 500mA, 10V | 2.4V @ 1mA | - | 35 pF @ 18 V | 10V | ±20V | N-Channel | - | - | - | ZVN3306 | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | E-Line-3 | E-Line (TO-92 compatible) | 625mW (Ta) | |||||
FQPF10N20 | onsemi | MOSFET N-CH 200V 6.8A TO220F | vorrätig4680 pcs | - | - | 200 V | 6.8A (Tc) | 360mOhm @ 3.4A, 10V | 5V @ 250µA | 18 nC @ 10 V | 670 pF @ 25 V | 10V | ±30V | N-Channel | - | - | - | FQPF1 | Tube | QFET® | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F-3 | 40W (Tc) | |||||
IPB320N20N3GATMA1 | Infineon Technologies | MOSFET N-CH 200V 34A D2PAK | vorrätig21364 pcs | - | - | 200 V | 34A (Tc) | 32mOhm @ 34A, 10V | 4V @ 90µA | 29 nC @ 10 V | 2350 pF @ 100 V | 10V | ±20V | N-Channel | - | - | - | IPB320 | Tape & Reel (TR) | OptiMOS™ | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | 136W (Tc) | |||||
IRL3402PBF | Infineon Technologies | MOSFET N-CH 20V 85A TO220AB | vorrätig4550 pcs | - | - | 20 V | 85A (Tc) | 8mOhm @ 51A, 7V | 700mV @ 250µA (Min) | 78 nC @ 4.5 V | 3300 pF @ 15 V | 4.5V, 7V | ±10V | N-Channel | - | - | - | - | Tube | HEXFET® | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 110W (Tc) | |||||
IRFPE40PBF | Vishay Siliconix | MOSFET N-CH 800V 5.4A TO247-3 | vorrätig21282 pcs | - | - | 800 V | 5.4A (Tc) | 2Ohm @ 3.2A, 10V | 4V @ 250µA | 130 nC @ 10 V | 1900 pF @ 25 V | 10V | ±20V | N-Channel | - | - | - | IRFPE40 | Tube | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 150W (Tc) | |||||
STP40NS15 | STMicroelectronics | MOSFET N-CH 150V 40A TO220AB | vorrätig5350 pcs | - | - | 150 V | 40A (Tc) | 52mOhm @ 40A, 10V | 4V @ 250µA | 110 nC @ 10 V | 2400 pF @ 25 V | 10V | ±20V | N-Channel | - | - | - | STP40N | Tube | MESH OVERLAY™ | - | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 140W (Tc) | |||||
FQB30N06LTM | onsemi | MOSFET N-CH 60V 32A D2PAK | vorrätig26251 pcs | - | - | 60 V | 32A (Tc) | 35mOhm @ 16A, 10V | 2.5V @ 250µA | 20 nC @ 5 V | 1040 pF @ 25 V | 5V, 10V | ±20V | N-Channel | - | - | - | FQB30N06 | Tape & Reel (TR) | QFET® | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 3.75W (Ta), 79W (Tc) | |||||
IRFB3006PBF | Infineon Technologies | MOSFET N-CH 60V 195A TO220AB | vorrätig14982 pcs | - | - | 60 V | 195A (Tc) | 2.5mOhm @ 170A, 10V | 4V @ 250µA | 300 nC @ 10 V | 8970 pF @ 50 V | 10V | ±20V | N-Channel | - | - | - | IRFB3006 | Tube | HEXFET® | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 375W (Tc) | |||||
STP180N4F6 | STMicroelectronics | MOSFET N-CHANNEL 40V 120A TO220 | vorrätig33540 pcs | - | - | 40 V | 120A (Tc) | - | - | - | - | 4.5V, 10V | ±20V | N-Channel | - | - | - | STP180 | Tube | STripFET™ F6 | - | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 | TO-220 | 190W (Tc) | |||||
IRFD9210 | Vishay Siliconix | MOSFET P-CH 200V 400MA 4DIP | vorrätig3830 pcs | - | - | 200 V | 400mA (Ta) | 3Ohm @ 240mA, 10V | 4V @ 250µA | 8.9 nC @ 10 V | 170 pF @ 25 V | 10V | ±20V | P-Channel | - | - | - | IRFD9210 | Tube | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-HVMDIP | 1W (Ta) | |||||
SI4378DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 19A 8SO | vorrätig4030 pcs | - | - | 20 V | 19A (Ta) | 2.7mOhm @ 25A, 4.5V | 1.8V @ 250µA | 55 nC @ 4.5 V | 8500 pF @ 10 V | 2.5V, 4.5V | ±12V | N-Channel | - | - | - | SI4378 | Tape & Reel (TR) | TrenchFET® | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 1.6W (Ta) | |||||
AOD2210 | Alpha & Omega Semiconductor Inc. | MOSFET N-CH 200V 3A/18A TO252 | vorrätig71840 pcs | - | - | 200 V | 3A (Ta), 18A (Tc) | 105mOhm @ 18A, 10V | 2.5V @ 250µA | 40 nC @ 10 V | 2065 pF @ 100 V | 5V, 10V | ±20V | N-Channel | - | - | - | AOD22 | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK) | 2.5W (Ta), 100W (Tc) | |||||
FDD86102 | onsemi | MOSFET N-CH 100V 8A/36A DPAK | vorrätig56210 pcs | - | - | 100 V | 8A (Ta), 36A (Tc) | 24mOhm @ 8A, 10V | 4V @ 250µA | 19 nC @ 10 V | 1035 pF @ 50 V | 6V, 10V | ±20V | N-Channel | - | - | - | FDD861 | Tape & Reel (TR) | PowerTrench® | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 3.1W (Ta), 62W (Tc) | |||||
STB18N60M2 | STMicroelectronics | MOSFET N-CH 600V 13A D2PAK | vorrätig23283 pcs | - | - | 600 V | 13A (Tc) | 280mOhm @ 6.5A, 10V | 4V @ 250µA | 21.5 nC @ 10 V | 791 pF @ 100 V | 10V | ±25V | N-Channel | - | - | - | STB18 | Tape & Reel (TR) | MDmesh™ II Plus | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 110W (Tc) | |||||
STB28NM60ND | STMicroelectronics | MOSFET N-CH 600V 23A D2PAK | vorrätig6817 pcs | - | - | 600 V | 23A (Tc) | 150mOhm @ 11.5A, 10V | 5V @ 250µA | 62.5 nC @ 10 V | 2090 pF @ 100 V | 10V | ±25V | N-Channel | - | - | - | STB28 | Tape & Reel (TR) | FDmesh™ II | - | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 190W (Tc) | |||||
FDG326P | onsemi | MOSFET P-CH 20V 1.5A SC88 | vorrätig4790 pcs | - | - | 20 V | 1.5A (Ta) | 140mOhm @ 1.5A, 4.5V | 1.5V @ 250µA | 7 nC @ 4.5 V | 467 pF @ 10 V | 1.8V, 4.5V | ±8V | P-Channel | - | - | - | FDG326 | Tape & Reel (TR) | PowerTrench® | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88 (SC-70-6) | 750mW (Ta) | |||||
DMP1555UFA-7B | Diodes Incorporated | MOSFET P-CH 12V 200MA 3DFN | vorrätig533400 pcs | - | - | 12 V | 200mA (Ta) | 800mOhm @ 200mA, 4.5V | 1V @ 250µA | 0.84 nC @ 4.5 V | 55.4 pF @ 10 V | 1.5V, 4.5V | ±8V | P-Channel | - | - | - | DMP1555 | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | X2-DFN0806-3 | 360mW (Ta) | |||||
PSMN3R9-60XSQ | NXP Semiconductors / Freescale | MOSFET N-CH 60V 75A TO-220F | vorrätig5310 pcs | Tube | - | 60V | 75A (Tc) | 4 mOhm @ 25A, 10V | 4V @ 1mA | 103nC @ 10V | 5494pF @ 25V | 10V | ±20V | N-Channel | Lead free / RoHS Compliant | 1 (Unlimited) | 568-11430-5 934068135127 PSMN3R9-60XSQ-ND |
- | - | - | N-Channel 60V 75A (Tc) 55W (Tc) Through Hole TO-220F | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220F | 55W (Tc) | |||||
IPD034N06N3GATMA1 | Infineon Technologies | MOSFET N-CH 60V 100A TO252-3 | vorrätig30430 pcs | - | - | 60 V | 100A (Tc) | 3.4mOhm @ 100A, 10V | 4V @ 93µA | 130 nC @ 10 V | 11000 pF @ 30 V | 10V | ±20V | N-Channel | - | - | - | IPD034 | Tape & Reel (TR) | OptiMOS™ | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 167W (Tc) | |||||
IXTH24N50 | IXYS | MOSFET N-CH 500V 24A TO247 | vorrätig5050 pcs | - | - | 500 V | 24A (Tc) | 230mOhm @ 12A, 10V | 4V @ 250µA | 190 nC @ 10 V | 4200 pF @ 25 V | 10V | ±20V | N-Channel | - | - | - | IXTH24 | Tube | MegaMOS™ | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 300W (Tc) | |||||
SCT20N120 | STMicroelectronics | SICFET N-CH 1200V 20A HIP247 | vorrätig3432 pcs | - | - | 1200 V | 20A (Tc) | 290mOhm @ 10A, 20V | 3.5V @ 1mA | 45 nC @ 20 V | 650 pF @ 400 V | 20V | +25V, -10V | N-Channel | - | - | - | SCT20 | Tube | - | - | SiCFET (Silicon Carbide) | -55°C ~ 200°C (TJ) | Through Hole | TO-247-3 | HiP247™ | 175W (Tc) | |||||
IRF1405ZSTRRPBF | Infineon Technologies | MOSFET N-CH 55V 75A D2PAK | vorrätig3950 pcs | - | - | 55 V | 75A (Tc) | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180 nC @ 10 V | 4780 pF @ 25 V | 10V | ±20V | N-Channel | - | - | - | - | Tape & Reel (TR) | HEXFET® | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 230W (Tc) | |||||
HUF75321D3ST | onsemi | MOSFET N-CH 55V 20A TO252AA | vorrätig92000 pcs | - | - | 55 V | 20A (Tc) | 36mOhm @ 20A, 10V | 4V @ 250µA | 44 nC @ 20 V | 680 pF @ 25 V | 10V | ±20V | N-Channel | - | - | - | HUF75321 | Tape & Reel (TR) | UltraFET™ | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 93W (Tc) | |||||
CPH3350-TL-W | onsemi | MOSFET P-CH 20V 3A 3CPH | vorrätig5230 pcs | - | - | 20 V | 3A (Ta) | 83mOhm @ 1.5A, 4.5V | - | 4.6 nC @ 4.5 V | 375 pF @ 10 V | 1.8V, 4.5V | ±10V | P-Channel | - | - | - | CPH3350 | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3-CPH | 1W (Ta) | |||||
FQD13N06TM | onsemi | MOSFET N-CH 60V 10A DPAK | vorrätig107060 pcs | - | - | 60 V | 10A (Tc) | 140mOhm @ 5A, 10V | 4V @ 250µA | 7.5 nC @ 10 V | 310 pF @ 25 V | 10V | ±25V | N-Channel | - | - | - | FQD13N06 | Tape & Reel (TR) | QFET® | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 2.5W (Ta), 28W (Tc) | |||||
SIHG33N60EF-GE3 | Vishay Siliconix | MOSFET N-CH 600V 33A TO247AC | vorrätig9643 pcs | - | - | 600 V | 33A (Tc) | 98mOhm @ 16.5A, 10V | 4V @ 250µA | 155 nC @ 10 V | 3454 pF @ 100 V | 10V | ±30V | N-Channel | - | - | - | SIHG33 | Tube | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 278W (Tc) | |||||
AUIRF7732S2TR | Infineon Technologies | MOSFET N-CH 40V 14A DIRECTFET SC | vorrätig29079 pcs | - | - | 40 V | 14A (Ta) | 6.95mOhm @ 33A, 10V | 4V @ 50µA | 45 nC @ 10 V | 1700 pF @ 25 V | 10V | ±20V | N-Channel | - | - | - | AUIRF7732 | Tape & Reel (TR) | HEXFET® | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric SC | DIRECTFET™ SC | 2.5W (Ta), 41W (Tc) | |||||
IPD180N10N3GATMA1 | Infineon Technologies | MOSFET N-CH 100V 43A TO252-3 | vorrätig57160 pcs | - | - | 100 V | 43A (Tc) | 18mOhm @ 33A, 10V | 3.5V @ 33µA | 25 nC @ 10 V | 1800 pF @ 50 V | 6V, 10V | ±20V | N-Channel | - | - | - | IPD180 | Tape & Reel (TR) | OptiMOS™ | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 71W (Tc) | |||||
AOD446 | Alpha & Omega Semiconductor Inc. | MOSFET N-CH 75V 10A TO252 | vorrätig3740 pcs | - | - | 75 V | 10A (Tc) | 130mOhm @ 5A, 20V | 3V @ 250µA | 6.5 nC @ 10 V | 350 pF @ 30 V | 4.5V, 20V | ±25V | N-Channel | - | - | - | AOD44 | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK) | 2.1W (Ta), 20W (Tc) | |||||
5LP01M-TL-H | onsemi | MOSFET P-CH 50V 70MA 3MCP | vorrätig5460 pcs | - | - | 50 V | 70mA (Ta) | 23Ohm @ 40mA, 4V | - | 1.4 nC @ 10 V | 7.4 pF @ 10 V | 1.5V, 4V | ±10V | P-Channel | - | - | - | 5LP01 | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | MCP | 150mW (Ta) | |||||
NTD60N02RT4G | onsemi | MOSFET N-CH 25V 8.5A/32A DPAK | vorrätig3950 pcs | - | - | 25 V | 8.5A (Ta), 32A (Tc) | 10.5mOhm @ 20A, 10V | 2V @ 250µA | 14 nC @ 4.5 V | 1330 pF @ 20 V | 4.5V, 10V | ±20V | N-Channel | - | - | - | NTD60 | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.25W (Ta), 58W (Tc) | |||||
IRFB4615PBF | Infineon Technologies | MOSFET N-CH 150V 35A TO220AB | vorrätig37260 pcs | - | - | 150 V | 35A (Tc) | 39mOhm @ 21A, 10V | 5V @ 100µA | 26 nC @ 10 V | 1750 pF @ 50 V | 10V | ±20V | N-Channel | - | - | - | IRFB4615 | Tube | HEXFET® | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 144W (Tc) | |||||
SIHW33N60E-GE3 | Vishay Siliconix | MOSFET N-CH 600V 33A TO247AD | vorrätig10365 pcs | - | - | 600 V | 33A (Tc) | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150 nC @ 10 V | 3508 pF @ 100 V | 10V | ±30V | N-Channel | - | - | - | SIHW33 | Tube | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | TO-247AD | 278W (Tc) | |||||
IRF630NSTRLPBF | Infineon Technologies | MOSFET N-CH 200V 9.3A D2PAK | vorrätig27980 pcs | - | - | 200 V | 9.3A (Tc) | 300mOhm @ 5.4A, 10V | 4V @ 250µA | 35 nC @ 10 V | 575 pF @ 25 V | 10V | ±20V | N-Channel | - | - | - | IRF630 | Tape & Reel (TR) | HEXFET® | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 82W (Tc) | |||||
3LP01C-TB-H | onsemi | MOSFET P-CH 30V 100MA 3CP | vorrätig4110 pcs | - | - | 30 V | 100mA (Ta) | 10.4Ohm @ 50mA, 4V | - | 1.43 nC @ 10 V | 7.5 pF @ 10 V | 1.5V, 4V | ±10V | P-Channel | - | - | - | 3LP01 | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59-3/CP3 | 250mW (Ta) | |||||
SIHG22N60E-GE3 | Vishay Siliconix | MOSFET N-CH 600V 21A TO247AC | vorrätig22143 pcs | - | - | 600 V | 21A (Tc) | 180mOhm @ 11A, 10V | 4V @ 250µA | 86 nC @ 10 V | 1920 pF @ 100 V | 10V | ±30V | N-Channel | - | - | - | SIHG22 | Tube | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 227W (Tc) | |||||
IRF7471PBF | Infineon Technologies | MOSFET N-CH 40V 10A 8SO | vorrätig3680 pcs | - | - | 40 V | 10A (Ta) | 13mOhm @ 10A, 10V | 3V @ 250µA | 32 nC @ 4.5 V | 2820 pF @ 20 V | 4.5V, 10V | ±20V | N-Channel | - | - | - | IRF7471 | Tube | HEXFET® | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | |||||
VN0104N3-G | Microchip Technology | MOSFET N-CH 40V 350MA TO92-3 | vorrätig80820 pcs | - | - | 40 V | 350mA (Tj) | 3Ohm @ 1A, 10V | 2.4V @ 1mA | - | 65 pF @ 25 V | 5V, 10V | ±20V | N-Channel | - | - | - | VN0104 | Bag | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Tc) | |||||
HUF75333S3ST | onsemi | MOSFET N-CH 55V 66A D2PAK | vorrätig4090 pcs | - | - | 55 V | 66A (Tc) | 16mOhm @ 66A, 10V | 4V @ 250µA | 85 nC @ 20 V | 1300 pF @ 25 V | 10V | ±20V | N-Channel | - | - | - | HUF75 | Tape & Reel (TR) | UltraFET™ | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 150W (Tc) | |||||
SN7002W L6327 | Infineon Technologies | MOSFET N-CH 60V 230MA SOT323-3 | vorrätig3860 pcs | - | - | 60 V | 230mA (Ta) | 5Ohm @ 230mA, 10V | 1.8V @ 26µA | 1.5 nC @ 10 V | 45 pF @ 25 V | 4.5V, 10V | ±20V | N-Channel | - | - | - | SN7002W | Tape & Reel (TR) | SIPMOS® | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | PG-SOT323 | 500mW (Ta) | |||||
IRFB4610 | Infineon Technologies | MOSFET N-CH 100V 73A TO220AB | vorrätig4030 pcs | - | - | 100 V | 73A (Tc) | 14mOhm @ 44A, 10V | 4V @ 100µA | 140 nC @ 10 V | 3550 pF @ 50 V | 10V | ±20V | N-Channel | - | - | - | - | Tube | HEXFET® | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 190W (Tc) | |||||
FQP55N06 | onsemi | MOSFET N-CH 60V 55A TO220-3 | vorrätig3820 pcs | - | - | 60 V | 55A (Tc) | 20mOhm @ 27.5A, 10V | 4V @ 250µA | 46 nC @ 10 V | 1690 pF @ 25 V | 10V | ±25V | N-Channel | - | - | - | FQP5 | Tube | QFET® | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 133W (Tc) | |||||
STD50NH02L-1 | STMicroelectronics | MOSFET N-CH 24V 50A I-PAK | vorrätig4290 pcs | - | - | 24 V | 50A (Tc) | 10.5mOhm @ 25A, 10V | 1.8V @ 250µA | 24 nC @ 10 V | 1400 pF @ 25 V | 5V, 10V | ±20V | N-Channel | - | - | - | STD50N | Tube | STripFET™ III | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 60W (Tc) | |||||
FQB27P06TM | onsemi | MOSFET P-CH 60V 27A D2PAK | vorrätig23792 pcs | - | - | 60 V | 27A (Tc) | 70mOhm @ 13.5A, 10V | 4V @ 250µA | 43 nC @ 10 V | 1400 pF @ 25 V | 10V | ±25V | P-Channel | - | - | - | FQB27 | Tape & Reel (TR) | QFET® | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 3.75W (Ta), 120W (Tc) | |||||
STW18N60M2 | STMicroelectronics | MOSFET N-CH 600V 13A TO247 | vorrätig5250 pcs | - | - | 600 V | 13A (Tc) | 280mOhm @ 6.5A, 10V | 4V @ 250µA | 21.5 nC @ 10 V | 791 pF @ 100 V | 10V | ±25V | N-Channel | - | - | - | STW18 | Tube | MDmesh™ II Plus | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 110W (Tc) | |||||
IXFR44N80P | IXYS | MOSFET N-CH 800V 25A ISOPLUS247 | vorrätig2494 pcs | - | - | 800 V | 25A (Tc) | 200mOhm @ 22A, 10V | 5V @ 8mA | 200 nC @ 10 V | 12000 pF @ 25 V | 10V | ±30V | N-Channel | - | - | - | IXFR44 | Tube | HiPerFET™, Polar | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | ISOPLUS247™ | 300W (Tc) | |||||
STU10NM60N | STMicroelectronics | MOSFET N-CH 600V 10A IPAK | vorrätig26792 pcs | - | - | 600 V | 10A (Tc) | 550mOhm @ 4A, 10V | 4V @ 250µA | 19 nC @ 10 V | 540 pF @ 50 V | 10V | ±25V | N-Channel | - | - | - | STU10 | Tube | MDmesh™ II | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 70W (Tc) | |||||
IRFR4510TRPBF | Infineon Technologies | MOSFET N CH 100V 56A DPAK | vorrätig49080 pcs | - | - | 100 V | 56A (Tc) | 13.9mOhm @ 38A, 10V | 4V @ 100µA | 81 nC @ 10 V | 3031 pF @ 50 V | 10V | ±20V | N-Channel | - | - | - | IRFR4510 | Tape & Reel (TR) | HEXFET® | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 143W (Tc) | |||||
NDT456P | onsemi | MOSFET P-CH 30V 7.5A SOT-223-4 | vorrätig24590 pcs | - | - | 30 V | 7.5A (Ta) | 30mOhm @ 7.5A, 10V | 3V @ 250µA | 67 nC @ 10 V | 1440 pF @ 15 V | 4.5V, 10V | ±20V | P-Channel | - | - | - | NDT456 | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-4 | 3W (Ta) | |||||
IRFB4332PBF | Infineon Technologies | MOSFET N-CH 250V 60A TO220AB | vorrätig20497 pcs | - | - | 250 V | 60A (Tc) | 33mOhm @ 35A, 10V | 5V @ 250µA | 150 nC @ 10 V | 5860 pF @ 25 V | 10V | ±30V | N-Channel | - | - | - | IRFB4332 | Tube | HEXFET® | - | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 390W (Tc) |