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ZuhauseProdukteDiskrete Halbleiter-ProdukteTransistoren-FETs, MOSFETs-Einzel

Transistoren-FETs, MOSFETs-Einzel

19,927 -Produkte gefunden

Proudktliste

1...262263264265266267268...399
Vergleichen Bild Teil # Hersteller Beschreibung Lagerung ECAD -Modell RoHS FET-Merkmal Drain-Source-Spannung (Vdss) Strom - Ununterbrochener Abfluss (Id) bei 25 ° C Rds On (Max) @ Id, Vgs VGS (th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Eingabekapazität (Ciss) (Max) @ Vds Antriebsspannung (Max Rds On, Min Rds On) Vgs (Max) Typ FET Grundproduktnummer Paket Serie Technologie Betriebstemperatur Befestigungsart Verpackung / Gehäuse Supplier Device-Gehäuse Verlustleistung (max) Anzahl
RJK03B9DPA-00#J53 Renesas Electronics America Inc MOSFET N-CH 30V 30A 8WPAK vorrätig89260 pcs - 30 V 30A (Ta) 10.6mOhm @ 15A, 10V - 7.4 nC @ 4.5 V 1110 pF @ 10 V - - N-Channel - Bulk - MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerWDFN 8-WPAK 25W (Tc)
FDP060AN08A0 Fairchild Semiconductor POWER FIELD-EFFECT TRANSISTOR, 8 vorrätig3820 pcs - 75 V 16A (Ta), 80A (Tc) 6mOhm @ 80A, 10V 4V @ 250µA 95 nC @ 10 V 5150 pF @ 25 V 6V, 10V ±20V N-Channel - Bulk PowerTrench® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 255W (Tc)
IRF9520PBF Vishay Siliconix MOSFET P-CH 100V 6.8A TO220AB vorrätig57000 pcs - 100 V 6.8A (Tc) 600mOhm @ 4.1A, 10V 4V @ 250µA 18 nC @ 10 V 390 pF @ 25 V 10V ±20V P-Channel IRF9520 Tube - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 60W (Tc)
IRF9Z24STRRPBF Vishay Siliconix MOSFET P-CH 60V 11A D2PAK vorrätig28233 pcs - 60 V 11A (Tc) 280mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V 570 pF @ 25 V 10V ±20V P-Channel IRF9Z24 Tape & Reel (TR) - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 3.7W (Ta), 60W (Tc)
AOB1606L Alpha & Omega Semiconductor Inc. MOSFET N-CH 60V 12A/178A TO263 vorrätig4220 pcs - 60 V 12A (Ta), 178A (Tc) 6mOhm @ 20A, 10V 3.7V @ 250µA 102 nC @ 10 V 4500 pF @ 25 V 10V ±20V N-Channel AOB16 Tape & Reel (TR) - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D2Pak) 2.1W (Ta), 417W (Tc)
IRFS4010TRRPBF International Rectifier HEXFET POWER MOSFET vorrätig4900 pcs - 100 V 180A (Tc) 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V 9575 pF @ 50 V 10V ±20V N-Channel - Bulk HEXFET® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 375W (Tc)
ON5520215 NXP USA Inc. SMALL SIGNAL N-CHANNEL MOSFET vorrätig2020250 pcs - - - - - - - - - - - Bulk * - - - - - -
IRFU120 Vishay Siliconix MOSFET N-CH 100V 7.7A TO251AA vorrätig3810 pcs - 100 V 7.7A (Tc) 270mOhm @ 4.6A, 10V 4V @ 250µA 16 nC @ 10 V 360 pF @ 25 V 10V ±20V N-Channel IRFU1 Tube - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 2.5W (Ta), 42W (Tc)
IRF624SPBF Vishay Siliconix MOSFET N-CH 250V 4.4A D2PAK vorrätig33600 pcs - 250 V 4.4A (Tc) 1.1Ohm @ 2.6A, 10V 4V @ 250µA 14 nC @ 10 V 260 pF @ 25 V 10V ±20V N-Channel IRF624 Tube - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 3.1W (Ta), 50W (Tc)
FDD6635 Fairchild Semiconductor POWER FIELD-EFFECT TRANSISTOR, 1 vorrätig3840 pcs - 35 V 15A (Ta), 59A (Tc) 10mOhm @ 15A, 10V 3V @ 250µA 36 nC @ 10 V 1400 pF @ 20 V 4.5V, 10V ±20V N-Channel - Bulk PowerTrench® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 3.8W (Ta), 55W (Tc)
TK16A55D(STA4,Q,M) Toshiba Semiconductor and Storage MOSFET N-CH 550V 16A TO220SIS vorrätig5200 pcs - 550 V 16A (Ta) 330mOhm @ 8A, 10V 4V @ 1mA 45 nC @ 10 V 2600 pF @ 25 V - - N-Channel TK16A55 Tube π-MOSVII MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS -
AOI4185 Alpha & Omega Semiconductor Inc. MOSFET P-CH 40V 40A TO251A vorrätig149800 pcs - 40 V 40A (Tc) 15mOhm @ 20A, 10V 3V @ 250µA 55 nC @ 10 V 2550 pF @ 20 V 4.5V, 10V ±20V P-Channel AOI41 Tube - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Stub Leads, IPak TO-251A 2.5W (Ta), 62.5W (Tc)
IPA60R080P7 Infineon Technologies POWER FIELD-EFFECT TRANSISTOR vorrätig4380 pcs - - - - - - - - - - - Bulk * - - - - - -
FCMT299N60 onsemi MOSFET N-CH 600V 12A POWER88 vorrätig21422 pcs - 600 V 12A (Ta) 299mOhm @ 6A, 10V 3.5V @ 250µA 51 nC @ 10 V 1948 pF @ 380 V 10V ±20V N-Channel FCMT299 Tape & Reel (TR) SuperFET® II MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-PowerTSFN Power88 125W (Tc)
FDN338P Fairchild Semiconductor SMALL SIGNAL FIELD-EFFECT TRANSI vorrätig5240 pcs - 20 V 1.6A (Ta) 115mOhm @ 1.6A, 4.5V 1.5V @ 250µA 6.2 nC @ 4.5 V 451 pF @ 10 V 2.5V, 4.5V ±8V P-Channel - Bulk PowerTrench® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 500mW (Ta)
FQL40N50 Fairchild Semiconductor POWER FIELD-EFFECT TRANSISTOR, 4 vorrätig10096 pcs - 500 V 40A (Tc) 110mOhm @ 20A, 10V 5V @ 250µA 200 nC @ 10 V 7500 pF @ 25 V 10V ±30V N-Channel - Bulk QFET® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA HPM F2 460W (Tc)
IRL640S Vishay Siliconix MOSFET N-CH 200V 17A D2PAK vorrätig4450 pcs - 200 V 17A (Tc) 180mOhm @ 10A, 5V 2V @ 250µA 66 nC @ 5 V 1800 pF @ 25 V 4V, 5V ±10V N-Channel IRL640 Tube - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 3.1W (Ta), 125W (Tc)
IPL65R195C7AUMA1 Infineon Technologies MOSFET N-CH 650V 12A 4VSON vorrätig22344 pcs - 650 V 12A (Tc) 195mOhm @ 2.9A, 10V 4V @ 290µA 23 nC @ 10 V 1150 pF @ 400 V 10V ±20V N-Channel IPL65R Tape & Reel (TR) CoolMOS™ C7 MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount 4-PowerTSFN PG-VSON-4 75W (Tc)
AUIRFS8403TRL International Rectifier AUIRFS8403 - 20V-40V N-CHANNEL A vorrätig24163 pcs - 40 V 123A (Tc) 3.3mOhm @ 70A, 10V 3.9V @ 100µA 93 nC @ 10 V 3183 pF @ 25 V 10V ±20V N-Channel - Bulk HEXFET® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3 99W (Tc)
BSZ088N03LSG Infineon Technologies BSZ088N03 - 12V-300V N-CHANNEL P vorrätig139120 pcs - - - - - - - - - - - - - - - - - - -
FQP4N80 Fairchild Semiconductor POWER FIELD-EFFECT TRANSISTOR, 3 vorrätig4730 pcs - 800 V 3.9A (Tc) 3.6Ohm @ 1.95A, 10V 5V @ 250µA 25 nC @ 10 V 880 pF @ 25 V 10V ±30V N-Channel - Bulk QFET® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 130W (Tc)
FDC645N Fairchild Semiconductor SMALL SIGNAL FIELD-EFFECT TRANSI vorrätig4150 pcs - 30 V 5.5A (Ta) 26mOhm @ 6.2A, 10V 2V @ 250µA 21 nC @ 4.5 V 1460 pF @ 15 V 4.5V, 10V ±12V N-Channel - Bulk PowerTrench® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 SuperSOT™-6 1.6W (Ta)
FDMS8660S onsemi MOSFET N-CH 30V 25A/40A 8PQFN vorrätig4710 pcs - 30 V 25A (Ta), 40A (Tc) 2.4mOhm @ 25A, 10V 2V @ 250µA 113 nC @ 10 V 4345 pF @ 15 V 4.5V, 10V ±20V N-Channel FDMS86 Tape & Reel (TR) PowerTrench® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 2.5W (Ta), 83W (Tc)
APT10026JLL Microchip Technology MOSFET N-CH 1000V 30A ISOTOP vorrätig395 pcs - 1000 V 30A (Tc) 260mOhm @ 15A, 10V 5V @ 5mA 267 nC @ 10 V 7114 pF @ 25 V - - N-Channel APT10026 Tube POWER MOS 7® MOSFET (Metal Oxide) - Chassis Mount SOT-227-4, miniBLOC ISOTOP® -
STH130N10F3-2 STMicroelectronics MOSFET N-CH 100V 120A H2PAK-2 vorrätig3660 pcs - 100 V 120A (Tc) 9.3mOhm @ 60A, 10V 4V @ 250µA 57 nC @ 10 V 3305 pF @ 25 V 10V ±20V N-Channel STH130 Tape & Reel (TR) STripFET™ III MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB H2Pak-2 250W (Tc)
FDD6672A Fairchild Semiconductor MOSFET N-CH 30V 65A TO252 vorrätig30238 pcs - 30 V 65A (Ta) 8mOhm @ 14A, 10V 2V @ 250µA 46 nC @ 4.5 V 5070 pF @ 15 V 4.5V, 10V ±12V N-Channel - Bulk PowerTrench® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 3.2W (Ta), 70W (Tc)
AOTF11N60L Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 11A TO220-3F vorrätig45070 pcs - 600 V 11A (Tc) 650mOhm @ 5.5A, 10V 4.5V @ 250µA 37 nC @ 10 V 1990 pF @ 25 V 10V ±30V N-Channel AOTF11 Tube - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 37.9W (Tc)
FQD13N10LTM Fairchild Semiconductor POWER FIELD-EFFECT TRANSISTOR, 1 vorrätig5330 pcs - 100 V 10A (Tc) 180mOhm @ 5A, 10V 2V @ 250µA 12 nC @ 5 V 520 pF @ 25 V 5V, 10V ±20V N-Channel - Bulk QFET® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 2.5W (Ta), 40W (Tc)
RTR025P02TL Rohm Semiconductor MOSFET P-CH 20V 2.5A TSMT3 vorrätig164200 pcs - 20 V 2.5A (Ta) 95mOhm @ 2.5A, 4.5V 2V @ 1mA 7 nC @ 4.5 V 630 pF @ 10 V 2.5V, 4.5V ±12V P-Channel RTR025 Tape & Reel (TR) - MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-96 TSMT3 1W (Ta)
BSC057N08NS3GATMA1 Infineon Technologies MOSFET N-CH 80V 16A/100A TDSON vorrätig41697 pcs - 80 V 16A (Ta), 100A (Tc) 5.7mOhm @ 50A, 10V 3.5V @ 73µA 56 nC @ 10 V 3900 pF @ 40 V 6V, 10V ±20V N-Channel BSC057 Tape & Reel (TR) OptiMOS™ MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8-5 2.5W (Ta), 114W (Tc)
IRF9630SPBF Vishay Siliconix MOSFET P-CH 200V 6.5A D2PAK vorrätig36730 pcs - 200 V 6.5A (Tc) 800mOhm @ 3.9A, 10V 4V @ 250µA 29 nC @ 10 V 700 pF @ 25 V 10V ±20V P-Channel IRF9630 Tube - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 3W (Ta), 74W (Tc)
IRFBC30AL Vishay Siliconix MOSFET N-CH 600V 3.6A I2PAK vorrätig4640 pcs - 600 V 3.6A (Tc) 2.2Ohm @ 2.2A, 10V 4.5V @ 250µA 23 nC @ 10 V 510 pF @ 25 V 10V ±30V N-Channel IRFBC30 Tube - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 74W (Tc)
SIA462DJ-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 12A PPAK SC70-6 vorrätig286650 pcs - 30 V 12A (Tc) 18mOhm @ 9A, 10V 2.4V @ 250µA 17 nC @ 10 V 570 pF @ 15 V 4.5V, 10V ±20V N-Channel SIA462 Tape & Reel (TR) TrenchFET® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SC-70-6 PowerPAK® SC-70-6 Single 3.5W (Ta), 19W (Tc)
IRF6218PBF International Rectifier AUTOMOTIVE HEXFET P-CHANNEL vorrätig3650 pcs - 150 V 27A (Tc) 150mOhm @ 16A, 10V 5V @ 250µA 110 nC @ 10 V 2210 pF @ 25 V 10V ±20V P-Channel - Tube HEXFET® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 250W (Tc)
IRF2807L Infineon Technologies MOSFET N-CH 75V 82A TO262 vorrätig3980 pcs - 75 V 82A (Tc) 13mOhm @ 43A, 10V 4V @ 250µA 160 nC @ 10 V 3820 pF @ 25 V 10V ±20V N-Channel - Tube HEXFET® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 230W (Tc)
FDS6680AS Fairchild Semiconductor SMALL SIGNAL FIELD-EFFECT TRANSI vorrätig5130 pcs - 30 V 11.5A (Ta) 10mOhm @ 11.5A, 10V 3V @ 1mA 30 nC @ 10 V 1240 pF @ 15 V 4.5V, 10V ±20V N-Channel - Bulk PowerTrench®, SyncFET™ MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC 2.5W (Ta)
NVTFWS015N04CTAG onsemi MOSFET N-CH 40V 9.4A/27A 8WDFN vorrätig69560 pcs - 40 V 9.4A (Ta), 27A (Tc) 17.3mOhm @ 7.5A, 10V 3.5V @ 20µA 6.3 nC @ 10 V 325 pF @ 25 V 10V ±20V N-Channel NVTFWS015 Tape & Reel (TR) Automotive, AEC-Q101 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerWDFN 8-WDFN (3.3x3.3) 2.9W (Ta), 23W (Tc)
STH3N150-2 STMicroelectronics MOSFET N-CH 1500V 2.5A H2PAK vorrätig11095 pcs - 1500 V 2.5A (Tc) 9Ohm @ 1.3A, 10V 5V @ 250µA 29.3 nC @ 10 V 939 pF @ 25 V 10V ±30V N-Channel STH3N150 Tape & Reel (TR) PowerMESH™ MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab) Variant H²PAK 140W (Tc)
FDN340P Fairchild Semiconductor SMALL SIGNAL FIELD-EFFECT TRANSI vorrätig5350 pcs - 20 V 2A (Ta) 70mOhm @ 2A, 4.5V 1.5V @ 250µA 10 nC @ 4.5 V 779 pF @ 10 V 2.5V, 4.5V ±8V P-Channel - Bulk PowerTrench® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount Die Die 500mW (Ta)
AOT22N50L Alpha & Omega Semiconductor Inc. MOSFET N-CH 500V 22A TO220 vorrätig31672 pcs - 500 V 22A (Tc) 260mOhm @ 11A, 10V 4.5V @ 250µA 83 nC @ 10 V 3710 pF @ 25 V 10V ±30V N-Channel AOT22N50 Tube - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 417W (Tc)
IRLU8743PBF Infineon Technologies MOSFET N-CH 30V 160A IPAK vorrätig43360 pcs - 30 V 160A (Tc) 3.1mOhm @ 25A, 10V 2.35V @ 100µA 59 nC @ 4.5 V 4880 pF @ 15 V 4.5V, 10V ±20V N-Channel IRLU8743 Tube HEXFET® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251AA) 135W (Tc)
IXFH12N50F IXYS MOSFET N-CH 500V 12A TO247 vorrätig3680 pcs - 500 V 12A (Tc) 400mOhm @ 6A, 10V 5.5V @ 2.5mA 54 nC @ 10 V 1870 pF @ 25 V 10V ±20V N-Channel IXFH12 Tube HiPerRF™ MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXFH) 180W (Tc)
ZXMN3A02N8TA Diodes Incorporated MOSFET N-CH 30V 7.3A 8SO vorrätig4300 pcs - 30 V 7.3A (Ta) 25mOhm @ 12A, 10V 1V @ 250µA 26.8 nC @ 10 V 1400 pF @ 25 V 4.5V, 10V ±20V N-Channel ZXMN3 Tape & Reel (TR) - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.56W (Ta)
SIS478DN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 12A PPAK1212-8 vorrätig3940 pcs - 30 V 12A (Tc) 20mOhm @ 8A, 10V 2.5V @ 250µA 10.5 nC @ 10 V 398 pF @ 15 V 4.5V, 10V ±25V N-Channel SIS478 Tape & Reel (TR) TrenchFET® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 15.6W (Tc)
DMP32M6SPS-13 Diodes Incorporated MOSFET P-CH 30V 100A PWRDI5060-8 vorrätig50030 pcs - 30 V 100A (Tc) 2.6mOhm @ 20A, 10V 2.5V @ 250µA 158 nC @ 10 V 8594 pF @ 15 V 4.5V, 10V ±20V P-Channel DMP32 Tape & Reel (TR) - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 (Type K) 1.3W
CSD16406Q3 Texas Instruments MOSFET N-CH 25V 19A/60A 8VSON vorrätig80760 pcs - 25 V 19A (Ta), 60A (Tc) 5.3mOhm @ 20A, 10V 2.2V @ 250µA 8.1 nC @ 4.5 V 1100 pF @ 12.5 V 4.5V, 10V +16V, -12V N-Channel CSD16406 Tape & Reel (TR) NexFET™ MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-VSON-CLIP (3.3x3.3) 2.7W (Ta)
RJK0393DPA-00#J5A Renesas Electronics America Inc MOSFET N-CH 30V 40A 8WPAK vorrätig62930 pcs - 30 V 40A (Ta) 4.3mOhm @ 20A, 10V - 21 nC @ 4.5 V 3270 pF @ 10 V 4.5V, 10V ±20V N-Channel RJK0393 Tape & Reel (TR) - MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerWDFN 8-WPAK 40W (Tc)
IXFN80N50P IXYS MOSFET N-CH 500V 66A SOT227B vorrätig1401 pcs - 500 V 66A (Tc) 65mOhm @ 500mA, 10V 5V @ 8mA 195 nC @ 10 V 12700 pF @ 25 V 10V ±30V N-Channel IXFN80 Tube HiPerFET™, Polar MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 700W (Tc)
BSC091N03MSCG Infineon Technologies N-CHANNEL POWER MOSFET vorrätig175670 pcs - - - - - - - - - - - Bulk * - - - - - -
MTW7N80E onsemi N-CHANNEL POWER MOSFET vorrätig5030 pcs - - - - - - - - - - - Bulk * - - - - - -
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